Correlation between optical, morphological and compositional properties of Aluminum Nitride thin films by Pulsed Laser Deposition

Autores

Identificador

866781

Fecha de publicación

2016

Forma obra

Texto

Lugar de producción

IEEE Sensors Journal; Vol. 16, No. 2, 2016

Idioma

inglés

Nota de edición

Digitalización realizada por la Biblioteca Virtual del Banco de la República (Colombia)

Materias

Tecnología; Tecnología / Ciencias médicas Medicina; Tecnología / Ingeniería y operaciones afines

Notas

Colfuturo
Pulsed laser deposition; Aluminium nitride; Sensors acustic wave
AlN thin films were grown in a N2 atmosphere onto a Si/Si3N4 substrate by pulsed laser ablation. We have varied the substrate temperature for the thin film growth, using X-ray Reflectometry (XRR) analysis, we have characterized the thickness and density of the thin layer and the interface roughness from the X-ray reflectivity profiles.
Experimental data showed that the root-mean-square roughness was in the range of 0.3 nm. X-ray photoelectron spectroscopy (XPS) was employed to characterize the chemical.

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@Book{BVMC:866781, author = {Pérez Taborda, Jaime Andrés; Vera Londoño, Liliana; Riascos, Henry}, title = {Correlation between optical, morphological and compositional properties of Aluminum Nitride thin films by Pulsed Laser Deposition}, url = {https://www.cervantesvirtual.com/obra/correlation-between-optical-morphological-and-compositional-properties-of-aluminum-nitride-thin-films-by-pulsed-laser-deposition-866781} }