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Título:
Correlation between optical, morphological and compositional properties of Aluminum Nitride thin films by Pulsed Laser Deposition
Fecha de publicación:
2016
Forma de obra:
Libros de texto
Producción:
IEEE Sensors Journal; Vol. 16, No. 2, 2016
Idioma:
inglés
Nota de edición:
Digitalización realizada por la Biblioteca Virtual del Banco de la República (Colombia)
Autor:
Pérez Taborda, Jaime Andrés; Vera Londoño, Liliana; Riascos, Henry
Materia:
Tecnología; Tecnología / Ciencias médicas Medicina; Tecnología / Ingeniería y operaciones afines
Nota general:
© Derechos reservados del autor
Nota general:
Colfuturo
Nota general:
Pulsed laser deposition; Aluminium nitride; Sensors acustic wave
Nota general:
AlN thin films were grown in a N2 atmosphere onto a Si/Si3N4 substrate by pulsed laser ablation. We have varied the substrate temperature for the thin film growth, using X-ray Reflectometry (XRR) analysis, we have characterized the thickness and density of the thin layer and the interface roughness from the X-ray reflectivity profiles.
Experimental data showed that the root-mean-square roughness was in the range of 0.3 nm. X-ray photoelectron spectroscopy (XPS) was employed to characterize the chemical.
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