Correlation between optical, morphological and compositional properties of aluminum nitride thin films by pulsed laser deposition
Manifestación
- Autores
- Identificador
- 868041
- Fecha de publicación
- 2015
- Forma obra
- Texto
- Lugar de producción
- IEEE Sensors Journal; Volume: 16, No. 2, 2015
- Idioma
- inglés
- Nota de edición
- Digitalización realizada por la Biblioteca Virtual del Banco de la República (Colombia)
- Materias
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- Ciencias naturales y matemáticas; Ciencias naturales y matemáticas / Física; Tecnología; Tecnología / Ingeniería y operaciones afines
- Notas
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- Colfuturo
- © Derechos reservados del autor
- Acoustic materials; Coatings; Laser sintering; Plasma materials processing; SAW filters; Wide band gap semiconductors
- AlN thin films were grown in a N2 atmosphere onto a Si/Si3N4 substrate by pulsed laser ablation. We have varied the substrate temperature for the thin film growth, using X-ray Reflectometry (XRR) analysis, we have characterized the thickness and density of the thin layer and the interface roughness from the X-ray reflectivity profiles. Experimental data showed that the root-mean-square roughness was in the range of 0.3 nm. X-ray photoelectron spectroscopy (XPS) was employed to characterize the chemical composition of the films.
These measurements detected carbon and oxygen contamination at the surface. In the high-resolution X-ray photoelectron spectroscopy Al2p data, binding energies for Al-N and Al-O species were identified but no Al-Al species were present. In the N1s data, N-O species were not detected, but chemically bonded O was present in the films as Al-O species. Furthermore the value of optical energy gap, Eg was about 5.3 (± 0.1) eV. The composition varied with process conditions, and the nitrogen content decreased in AlN films processed above 500°C.
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- https://www.cervantesvirtual.com/obra/correlation-between-optical-morphological-and-compositional-properties-of-aluminum-nitride-thin-films-by-pulsed-laser-deposition-868041
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