Low thermal conductivity and improved thermoelectric performance of nanocrystalline silicon germanium films by sputtering

Autores

Identificador

852629

Fecha de publicación

2016

Forma obra

Texto

Lugar de producción

Nanotechnology 27, 2016

Idioma

inglés

Nota de edición

Digitalización realizada por la Biblioteca Virtual del Banco de la República (Colombia)

Materias

Notas

Colfuturo
Silicio germanio; Termoelectricos; Plasma
Si x Ge 1? x alloys are well-known thermoelectric materials with a high figure of merit at high temperatures. In this work, metal-induced crystallization (MIC) has been used to grow Si 0.8 Ge 0.2 films that present improved thermoelectric performance (zT= 5.6× 10? 4 at room temperature)—according to previously reported values on films—with a relatively large power factor (? centerdot S 2= 16 ?W centerdot m? 1 centerdot K? 2). More importantly, a reduction in the thermal conductivity at room temperature (?= 1.13±0.12 W.

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BibTeX

@Book{BVMC:852629, author = {Pérez Taborda, Jaime Andrés; Romero, Juan José; Muñoz Rojo, Miguel; Briones, Fernando; Maíz, Jon; Gonzaleza, Marisol Martin}, title = {Low thermal conductivity and improved thermoelectric performance of nanocrystalline silicon germanium films by sputtering}, url = {https://www.cervantesvirtual.com/obra/low-thermal-conductivity-and-improved-thermoelectric-performance-of-nanocrystalline-silicon-germanium-films-by-sputtering-852629} }