Si x Ge 1? x alloys are well-known thermoelectric materials with a high figure of merit at high temperatures. In this work, metal-induced crystallization (MIC) has been used to grow Si 0.8 Ge 0.2 films that present improved thermoelectric performance (zT= 5.6× 10? 4 at room temperature)—according to previously reported values on films—with a relatively large power factor (? centerdot S 2= 16 ?W centerdot m? 1 centerdot K? 2). More importantly, a reduction in the thermal conductivity at room temperature (?= 1.13±0.12 W.