AlN film deposition as a semiconductor device
Manifestación
- Autores
- Identificador
- 860000
- Fecha de publicación
- 2013
- Forma obra
- Texto
- Lugar de producción
- Ingeniería e Investigación; Vol. 33, No. 2, 2013
- Idioma
- inglés
- Nota de edición
- Digitalización realizada por la Biblioteca Virtual del Banco de la República (Colombia)
- Materias
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- Ciencias naturales y matemáticas; Ciencias naturales y matemáticas / Física
- Notas
-
- Colfuturo
- © Derechos reservados del autor
- AlN films were deposited by pulsed laser deposition (PLD) using an Nd: YAG laser (?= 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the cathode was an aluminium high purity (99.99%) target.
The films were deposited using 7 J/cm2 laser fluence for 10 minutes on silicon (100) substrates. The working pressure was 9x10-3 mbar and the substrate temperature was varied from 200 C to 630 C. The thickness measured by profilometer was 150 nm for all films. Moreover, surface acoustic wave (SAW). - Aluminum nitride; Color purity frequency response; Optical reflectance; Pulsed laser deposition; Surface acoustic wave
- Enlace permanente
- https://www.cervantesvirtual.com/obra/aln-film-deposition-as-a-semiconductor-device-860000
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